r07ds0022ej0100 rev.1.00 page 1 of 6 jul 01, 2010 preliminary data sheet np160n055tuj mos field effect transistor description the np160n055tuj is n-channel mos field effect transistor designed for high current switching applications. features ? low on-state resistance ? r ds(on) = 3.0 m max. (v gs = 10 v, i d = 80 a) ? low ciss: ciss = 6900 pf typ. (v ds = 25 v, v gs = 0 v) ? designed for automotive application and aec-q101 qualified ordering information part no. lead plating packing package np160n055tuj -e1-ay ? 1 to-263-7pin, taping (e1 type) np160n055tuj -e2-ay ? 1 pure sn (tin) tape 800 pcs/reel to-263-7pin, taping (e2 type) note: ? 1. pb-free (this product does not cont ain pb in the external electrode.) absolute maximum ratings (t a = 25 c) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss 55 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25 c) i d(dc) 160 a drain current (pulse) ? 1 i d(pulse) 640 a total power dissipation (t c = 25 c) p t1 250 w total power dissipation (t a = 25 c) p t2 1.8 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c repetitive avalanche current ? 2 i ar 54 a repetitive avalanche energy ? 2 e ar 291 mj notes: ? 1. pw 10 s, duty cycle 1% ? 2. t ch(peak) 150 c, r g = 25 thermal resistance channel to case thermal resistance r th(ch-c) 0.60 c/w channel to ambient thermal resistance r th(ch-a) 83.3 c/w r07ds0022ej0100 rev.1.00 jul 01, 2010
np160n055tuj chapter title r07ds0022ej0100 rev.1.00 page 2 of 6 jul 01, 2010 electrical characteristics (t a = 25 c) item symbol min typ max unit test conditions zero gate voltage drain current i dss 1 a v ds = 55 v, v gs = 0 v gate leakage current i gss 100 na v gs = 20 v, v ds = 0 v gate to source threshold voltage v gs(th) 2.0 3.0 4.0 v v ds = v gs , i d = 250 a forward transfer admittance ? 1 | y fs | 55 110 s v ds = 5 v, i d = 80 a drain to source on-state resistance ? 1 r ds(on) 2.4 3.0 m v gs = 10 v, i d = 80 a input capacitance c iss 6900 10350 pf v ds = 25 v, output capacitance c oss 760 1140 pf v gs = 0 v, reverse transfer capacitance c rss 290 530 pf f = 1 mhz turn-on delay time t d(on) 40 90 ns v dd = 28 v, i d = 80 a, rise time t r 20 50 ns v gs = 10 v, turn-off delay time t d(off) 90 180 ns r g = 0 fall time t f 10 30 ns total gate charge q g 115 180 nc gate to source charge q gs 28 nc gate to drain charge q gd 36 nc v dd = 44 v, v gs = 10 v, i d = 160 a body diode forward voltage ? 1 v f(s-d) 0.9 1.5 v i f = 160 a, v gs = 0 v reverse recovery time t rr 57 ns reverse recovery charge q rr 115 nc i f = 160 a, v gs = 0 v, di/dt = 100 a/ s note: ? 1. pulsed test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1% v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
np160n055tuj chapter title r07ds0022ej0100 rev.1.00 page 3 of 6 jul 01, 2010 typical characteristics (t a = 25 c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t c - case temperature - c p t - total power dissipation - w 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 t c - case temperature - c forward bias safe operating area i d - drain current - a 0.1 1 10 100 1000 0.1 1 10 100 i d(pulse) t c = 25 c single pulse power dissipation limited i d(dc) r ds(on) limited (v gs = 10 v) p w = 1 1 0 0 s 1 1 0 m 1 s 1 1 m 1 s d c v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.001 0.01 0.1 1 10 100 1000 r th(ch-a) : 83.3 c/w r th(ch-c) : 0.60 c/w single pulse pw - pulse width - s 100 1 m 10 m 100 m 1 10 100 1000
np160n055tuj chapter title r07ds0022ej0100 rev.1.00 page 4 of 6 jul 01, 2010 drain current vs. drain to source voltage forward transf er characteristics i d - drain current - a 0 100 200 300 400 500 600 700 0 0.5 1 1.5 2 2.5 3 3.5 v gs = 10 v pulsed v ds - drain to source voltage - v i d - drain current - a 0.001 0.01 0.1 1 10 100 1000 0246 v ds = 10 v pulse t a = ? 55 c 25 c 85 c 150 c 175 c v gs - gate to source voltage - v gate to source threshold voltage vs. channel temperature forward transfer admittance vs. drain current v gs(th) - gate to source threshold voltage - v 0.0 1.0 2.0 3.0 4.0 -100 0 100 200 v ds = v gs i d = 250 a t ch - channel temperature - c | y fs | - forward transfer admittance - s 1 10 100 1000 1 10 100 1000 v ds = 5 v pulsed t a = ? 55 c 25 c 85 c 150 c 175 c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 1 2 3 4 5 6 7 8 1 10 100 1000 v gs = 10 v pulsed i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 1 2 3 4 5 0 5 10 15 20 25 pulsed 80 a 32 a i d = 160 a v gs - gate to source voltage - v
np160n055tuj chapter title r07ds0022ej0100 rev.1.00 page 5 of 6 jul 01, 2010 drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m 0.0 1.0 2.0 3.0 4.0 5.0 6.0 -100 -50 0 50 100 150 200 v gs = 10 v i d = 80 a pulsed t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 100 1000 10000 100000 0.1 1 10 100 v gs = 0 v f = 1 mhz c iss c rss c oss v ds - drain to source voltage - v switching characteristics dynamic input/output characteristics t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 1000 0.1 1 10 100 1000 v dd = 28 v v gs = 10 v r g = 0 t d(off) t d(on) t r t f i d - drain current - a v ds - drain to source voltage - v 0 10 20 30 40 50 60 0 20 40 60 80 100 120 0 2 4 6 8 10 12 i d = 160 a v ds v gs v dd = 44 v 28 v 11 v q g - gate charge - nc v gs - gate to source voltage - v source to drain diode forward voltage reverse recovery time vs. drain current i f - diode forward current - a 0.1 1 10 100 1000 00.511.5 pulsed v gs = 10 v 0 v v f(s-d) - source to drain voltage - v t rr - reverse recovery time - ns 10 100 0.1 1 10 100 1000 di/dt =100 a/ s v gs = 0 v i f - drain current - a
np160n055tuj chapter title r07ds0022ej0100 rev.1.00 page 6 of 6 jul 01, 2010 package drawings (unit: mm) to-263-7pin (mp-25zt) (mass: 1.5 g typ.) 8.4 typ. 10.0 0.2 7.6 typ. 8 9.15 0.2 14.85 0.5 1.2 0.3 1.27 typ. 0.6 0.15 2.5 10.0 0.2 123 5 467 4.45 0.2 1.3 0.2 0.025 to 0.25 0.5 0.2 0 to 8 0.25 2.54 0.25 1. gata 2, 3, 5, 6, 7. source 4, 8. fin (drain) equivalent circuit source body diode gate drain remark strong electric field, when exposed to this devic e, can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history np160n055tuj description rev. date page summary 1.00 jul 01, 2010 ? first eddition issued
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